Infineon IPB60R199CP CoolMOS™ Power Transistor: Technical Specifications and Application Overview

The relentless pursuit of higher efficiency, greater power density, and improved reliability in power electronics is a defining challenge for modern design engineers. Infineon Technologies addresses these demands head-on with its CoolMOS™ product family, and the IPB60R199CP stands as a prime example of this advanced superjunction (SJ) MOSFET technology. This article provides a detailed overview of its technical specifications and typical application scenarios.

At its core, the IPB60R199CP is a N-channel power transistor built on Infineon's revolutionary CoolMOS™ CP technology. This technology is renowned for achieving an exceptional balance between low on-state resistance (RDS(on)) and low gate charge (Qg), which are often competing parameters in standard MOSFETs. The key to its performance lies in the superjunction structure, which enables a drastically reduced RDS(on) for a given silicon area.

The primary technical specifications that define this component are:

Breakdown Voltage (VDS): 600 V, making it suitable for operation from a rectified 400 VAC mains and providing ample margin for voltage spikes.

Continuous Drain Current (ID): 11 A at a case temperature (TC) of 25°C. This robust current rating supports significant power levels.

On-State Resistance (RDS(on)): A remarkably low 199 mΩ (max.) at 25°C. This is the figure that directly translates to reduced conduction losses, a critical factor for efficiency.

Gate Charge (Qg): Typically 28 nC. A low Qg value ensures that switching losses are minimized, as the drive circuit can charge and discharge the gate quickly and efficiently.

Package: Housed in a TO-263-3 (D2PAK) package, which offers an excellent trade-off between footprint size, thermal performance, and mechanical robustness. This package is ideal for surface-mount assembly on PCBs with high power dissipation requirements.

The combination of these characteristics makes the IPB60R199CP an ideal choice for a wide array of switched-mode power supply (SMPS) applications. Designers frequently deploy it in:

Power Factor Correction (PFC) stages, both in interleaved and single-phase boost configurations, where its fast switching speed and high voltage rating are crucial for shaping the input current waveform efficiently.

Switch-Mode Power Supplies (SMPS), particularly in high-efficiency telecom and server power supplies. Its low losses contribute directly to meeting stringent 80 PLUS Titanium and Platinum efficiency standards.

Lighting solutions, including high-power LED drivers, where reliability and compact form factors are paramount.

Solar inverters and industrial motor drives, as a building block for DC-DC and DC-AC conversion stages.

In practice, utilizing the IPB60R199CP allows engineers to design systems that run cooler, can be made smaller due to reduced heatsinking needs, and ultimately achieve higher overall efficiency. Its performance is a direct result of Infineon's commitment to pushing the boundaries of power semiconductor physics.

ICGOODFIND: The Infineon IPB60R199CP is a high-performance 600V superjunction MOSFET that excels by offering an optimal balance of low conduction and switching losses. It is a cornerstone component for designing high-efficiency, high-power-density SMPS across industrial, computing, and renewable energy applications, enabling engineers to meet modern energy efficiency mandates.

Keywords: CoolMOS™, Superjunction MOSFET, Low RDS(on), High Efficiency, Power Supply (SMPS)