Infineon IPP60R120C7: A High-Performance Superjunction MOSFET for Efficient Power Conversion
The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. At the heart of many advanced power conversion systems, from server SMPS and telecom rectifiers to industrial motor drives and renewable energy inverters, lies the power MOSFET. The Infineon IPP60R120C7 stands out as a prime example of superjunction (SJ) technology engineered to meet these challenges head-on, delivering exceptional performance that directly translates into system-level improvements.
This MOSFET is characterized by its ultra-low specific on-resistance (R DS(on)) of just 120 mΩ maximum at 25°C, achieved at a breakdown voltage (V DSS) of 650 V. This optimal balance is the hallmark of CoolMOS™ C7 superjunction technology, which fundamentally redefines the silicon limit of traditional MOSFETs. The low R DS(on) is crucial for minimizing conduction losses when the device is in its on-state, a primary source of energy waste and heat generation in power circuits.
Beyond static losses, switching performance is paramount. The IPP60R120C7 exhibits superior switching characteristics, including low gate charge (Q G) and low effective output capacitance (C OSS(eff)). These parameters are critical for achieving high switching frequencies. By enabling faster switching with reduced losses during the transition between on and off states, designers can utilize smaller magnetic components (inductors and transformers) and heat sinks. This directly contributes to the overarching goal of increased power density – achieving more power throughput in a smaller physical footprint.
Furthermore, the device boasts an intrinsic fast body diode with excellent reverse recovery behavior. This feature is particularly valuable in bridge topologies like power factor correction (PFC) stages and half-bridges, where the body diode conducts during dead-time intervals. The improved softness and reduced reverse recovery charge (Q rr) mitigate voltage spikes and electromagnetic interference (EMI), enhancing system reliability and simplifying filter design.
The TO-220 FullPAK package offers a final touch of innovation. This package fully encapsulates the die, providing a fully isolated mounting surface. This eliminates the need for insulating washers and thermal pads between the device and the heat sink, thereby reducing the thermal resistance from junction to sink (R thJS). This simplifies assembly, improves long-term reliability by avoiding interface aging, and allows for better heat dissipation, which is essential for maintaining performance under high-stress conditions.
The Infineon IPP60R120C7 is a benchmark superjunction MOSFET that excels by offering a superior blend of ultra-low conduction loss, fast and clean switching performance, and excellent thermal management via its isolated package. It is an optimal choice for designers aiming to push the boundaries of efficiency and power density in modern switch-mode power supplies and other demanding power conversion applications.
Keywords: Superjunction MOSFET, Low On-Resistance, High Switching Frequency, Power Density, Isolated Package
