Infineon BSC030N04NSG 30V N-Channel MOSFET Datasheet and Application Review

The Infineon BSC030N04NSG is a highly efficient N-Channel MOSFET designed using Infineon’s advanced OptiMOS™ technology. Optimized for low voltage applications, this power MOSFET offers an exceptional balance of low on-state resistance and high switching performance, making it a popular choice for power management in a wide range of modern electronic systems.

With a drain-source voltage (VDS) of 30V and a continuous drain current (ID) of 70 A at 25°C, the BSC030N04NSG is particularly suited for high-current, low-voltage switching applications. One of its most significant features is its extremely low typical on-resistance (RDS(on)) of just 1.7 mΩ at 10 V gate-source voltage. This low RDS(on) is crucial for minimizing conduction losses, which directly translates to higher efficiency and reduced heat generation in power circuits.

The device is housed in a SuperSO8 (PG-TDSON-8) package, which offers an excellent thermal performance and power density compared to standard SO-8 packages. This makes it ideal for space-constrained applications where efficient heat dissipation is critical. Furthermore, the MOSFET is characterized by its low gate charge (QG) and figures of merit that ensure fast switching speeds, which are essential for high-frequency switch-mode power supplies (SMPS), synchronous rectification, and motor control circuits.

A key advantage of this MOSFET is its optimized for DC-DC conversion in computing and server systems, as well as in battery management systems for portable devices. Its robustness and efficiency also make it suitable for automotive applications, such as in LED lighting control and power distribution modules.

From an application perspective, designers must consider proper gate driving techniques to maximize performance. A gate driver IC capable of delivering sufficient peak current is recommended to quickly charge and discharge the input capacitance of the MOSFET, minimizing switching transition times and losses. Additionally, attention to PCB layout is critical—especially minimizing parasitic inductance in high-current paths—to avoid voltage spikes and ensure stable operation.

ICGOOODFIND: The Infineon BSC030N04NSG stands out as a superior component for power designers seeking efficiency and reliability in low-voltage, high-current environments. Its combination of ultra-low RDS(on), excellent thermal characteristics, and fast switching performance makes it an optimal choice for demanding applications in computing, automotive, and industrial systems.

Keywords:

OptiMOS™ Technology, Low RDS(on), SuperSO8 Package, DC-DC Conversion, Synchronous Rectification